Posted on Leave a comment


ROHM announced the availability of six (SCT3xxx xR series) new trench gate structure SiC MOSFETs (650V/ 1200V). It utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, reduces switching loss by up to 35% over conventional 3-pin package types (To-247N) and contributes to lower power consumption in a variety of applications. In the 3-pin package the effective gate voltage at the chip reduces due to the Voltage dropped across the parasitic inductance of the source terminal which reduces the switching speed. Using the 4-pin package separates the driver and power source pins and minimizing the effects of the parasitic inductance components, this made it possible to maximize the switching speed of SiC MOSFETs.

Part Number SCT3105KR
Package TO-247-4L
Unit Quantity 450
Minimum Package Quantity 30
Packing Type Tube
Constitution Materials List inquiry
RoHS Yes

Features of SCT3xxxxR SiC MOSFET

  • The series operates with two different breakdown voltages, 650V and 1200V.
  • Drain source on resistance varies between 30mΩ to 105mΩ.
  • Drain loss will be 134W, 165W and 262W.
  • Operating Temperature Range -55°C to 175 °C.
  • Fast switching speed and reverse recovery
  • Low on resistance, Easy to parallel and simple to drive.
  • Pb-free lead plating; RoHS compliant

The new SCT3xxx xR arrangement can be utilized in UPS Systems, Solar Power Inverters, Power Storage Systems, EV Charging Stations, Power Supply for Server Farms and Base Stations and the sky is the limit from there. This arrangement of MOSFET has 6 MOSFET part numbers under it, in particular SCT3105KR, SCT3080KR, SCT3080AR, SCT3060AR, SCT3040KR and SCT3030AR. The datasheet of all the MOSFETS can be found at its separate connection. The datasheet of SCT3105KR MOSFET is given at the base of this page.

The ROHM additionally proposed arrangements that encourages application assessment, including a SiC MOSFET assessment board, ‘P02SCT3040KR-EVK-001’ outfitted with entryway driver ICs (BM6101FV-C) alongside different power supply ICs and discrete segments advanced for SiC gadget drive. The board is good with both TO-247-4L and TO-247 N bundles. The assessment board and the SiC MOSFETs are accessible for buy , the cost of the MOSFETs stars from $10.15/unit (1,000pcs). For more subtleties visit the item page on authority Rogm site.

SCT3xxxxR SiC MOSFET Applications

  • Solar inverters
  • DC/DC converters
  • Switch mode power supplies
  • Induction heating
  • Motor drives
Leave a Reply

Your email address will not be published.