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MOUSER Launches TI LMG1210 MOSFET and GaN FET Driver

September 26, 2019 – Electronic components distribution focused on introducing new products and providing massive inventory. Mouser Electronics is now stocking Texas Instruments (TI) LMG1210 200 V half-bridge MOSFETs and GaN FET drivers. The LMG1210 is TI’s superior family of gallium nitride (GaN) power products with higher efficiency and power density, as well as smaller overall system sizes compared to traditional silicon alternatives, and is specifically targeted at speed-critical power conversion applications.

The TI LMG1210 is a 50 MHz half-bridge driver specifically designed to work with enhanced mode GaN FETs up to 200V. The LMG1210 achieves ultra-high performance and high efficiency with an ultra-short propagation delay of 10 ns, which is superior to traditional silicon half-bridge drivers. The device also features a low switching node capacitance of 1 pF and user-adjustable dead time control, allowing designers to optimize dead time within the system to improve efficiency.

With a 3.4 ns high-side/low-side delay match, a 4 ns minimum pulse width, and an internal LDO, the LMG1210 ensures a 5V gate drive voltage at any supply voltage. The drive also features an industry-wide ultra-high common mode transient immunity (CMTT) of over 300 V/ns for high system immunity.

The TI LMG1210 driver is ideal for high speed DC/DC converters, motor control, Class D audio amplifiers, Class E wireless charging, RF envelope tracking, and other power conversion applications.


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