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2N7000 Transistor–N-Channel MOSFET

What is 2N7000 Transistor

The 2N7000 is commonplace of N-channel, upgrade mode MOSFETs utilized for low-control exchanging applications, planned utilizing ON Semiconductor’s exclusive, high cell thickness, DMOS innovation. This item has been intended to constrict on-state opposition when offering tough, solid, and brisk exchanging execution. It very well may be used in many applications requiring up to 400 mA DC and can transmit beat flows up to 2 A. 2N7000 is particularly reasonable for low-voltage, low-current applications.

2N7000 is broadly accessible and prevalent part, regularly prescribed as helpful and normal segments to have around for specialist use, Packaged in a TO-92 fenced in area.

2N7000 Datasheet

Features of 2N7000

  • Small signal N-Channel MOSFET
  • Drain-Source Voltage (VDS) is 60V
  • Continuous Drain Current (ID) is 200mA
  • Pulsed Drain Current (ID-peak) is 500mA
  • Gate threshold voltage (VGS-th) is 3V
  • Gate-Source Voltage is (VGS) is ±20V
  • Turn ON and Turn off time is 10ns each.
  • Available in To-92 Package
  • Voltage Controlled Small Signal Switch
  • High Saturation Current Capability
  • Rugged and Reliable
  • High Density Cell Design for Low RDS(ON)

2N7000 Equivalent N-Channel MOSFET

BS170, NTE 491, IRF3205, IRF540N, IRF9Z34N, IRFP250N, IRFZ44.

2N7000 Pinout Configuration

Pin NumberPin NameDescription
1SourceCurrent flows out through Source
2GateControls the biasing of the MOSFET
3DrainCurrent flows in through Drain

2N7000 Applications

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Assorted Switching Applications

The 2N7000 has been referred to as a “FETlington” and as an “absolutely ideal hacker part.” The word “FETlington” is a reference to the Darlington-transistor-like saturation characteristic.

A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:

  • low threshold voltage means no gate bias required
  • high input impedance of the insulated gate means almost no gate current is required
  • consequently no current-limiting resistor is required in the gate input

MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature

The main disadvantages of these FETs over bipolar transistors in switching are the following:

  • susceptibility to cumulative damage from static discharge prior to installation
  • circuits with external gate exposure require a protection gate resistor or other static discharge protection
  • Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor

2N7000 is a small signal N-channel MOSFET. MOSFET’s are power electronic switches just like transistors, but with a higher current and voltage rating.  The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID). This mosfet comes in a compact TO-92 package and has a threshold voltage of 3V, hence if you looking for a small mosfet to switch a load then this IC could suit your purpose.

How to use 2N7000 transistor

A Mosfet has three terminals Drain, source and Gate. Current consistently streams in through the Drain and streams out through the Source. The Gate stick goes about as a switch for killing ON or the mosfet. On the off chance that the entryway is associated with Ground, at that point the mosfet is off that is there will be no association among Drain and source (Open). On the off chance that the Gate is furnished with its entryway source Voltage (VGS) at that point the MOSFET will be ON, that is the Drain and source stick will be associated together (Closed). Consequently by controlling the Voltage (VGS) we can switch the Mosfet henceforth the MOSFET is a voltage controlled gadget. The Gate Source Voltage (VGS) is a basic parameter while utilizing the transistor.  For this transistor the VGS is 20V, subsequently when we give this voltage the MOSFET will be completely shut. Any qualities in the middle of 20V is make the MOSFET to close somewhat in this manner making an incomplete association. The heap which is being exchanged by the MOSFET can be upto 60V (VDS) and can devour upto 200mA (ID). I have given an extremely basic circuit underneath which uses this MOSFET to control a heap engine of 24V 2A. The current and voltage esteems when the switch is shut and opened can likewise be watched.

circuit-diagram-of-2N7000-N-channel-MOSFET
circuit-diagram-of-2N7000-N-channel-MOSFET

As we all know the Gate Source voltage of this Mosfet is 20V, therefore we need to use 20V to show ON the MOSFET. Once the gate switch is open, the Gate pin of the Mosfet ought to be connected to ground to turn off the Load, therefore we’ve used a 10K pull down electrical resistor device (RGS) to turn off the MOSFET after its turned ON. The electrical resistor device RG is a current limiting resistor that limits the specified Gate current. If the load controlled by the Mosfet is an Inductive load just like the Motor that we’ve used here, then it’s necessary to use a regulator (a.k.a freewheel) diode safely discharge the charge accumulated by the Inductive coil.

Where to use 2N7000

2N7000 is a small signal N-channel MOSFET. MOSFET’s are power electronic switches just like transistors, but with a higher current and voltage rating.  The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID). This mosfet comes in a compact TO-92 package and has a threshold voltage of 3V, hence if you looking for a small mosfet to switch a load then this IC could suit your purpose.

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