Posted on Leave a comment

Silicon Carbide Semiconductor Device

This article describes some common silicon carbide semiconductor devices.

Silicon Carbide Semiconductor

Silicon carbide (SiC) is also called silicon carbide. It is made by using quartz sand, petroleum coke, wood chips, salt and other raw materials through high-temperature resistance furnace. In fact, silicon carbide has been discovered for a long time. It is characterized by stable chemical properties. High thermal conductivity, small thermal expansion coefficient, good wear resistance, high hardness (Mohs hardness is 9.5, second only to the world’s hardest diamond (10)), excellent thermal conductivity, high temperature and oxidation resistance. Due to the low natural content, silicon carbide is mostly artificial.

Silicon carbide semiconductor device

Due to its incomparable excellent properties, silicon carbide is a kind of wide bandgap semiconductor material. It is mainly used for various semiconductor materials because of its high thermal conductivity, high saturation, electron drift rate and high field strength. Among them, silicon carbide devices mainly include power diodes and power switch tubes. The power diode includes a junction barrier Schottky (JBS) diode, a PiN diode, and a super junction diode; the power switching transistor mainly includes a metal oxide semiconductor field effect switching transistor (MOSFET), a junction field effect switching transistor (JFET), and a bipolar Type switching transistor (BJT), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and emitter turn-off thyristor (ETO).

SiC Schottky diode

The most notable feature of Schottky diodes is that the reverse recovery time is short, but the conventional Schottky diodes typically have a withstand voltage of no more than 200V, but silicon carbide Schottky diodes can have shorter recovery time practices while being positive. The voltage is also reduced, the withstand voltage is much higher than 200V, the typical voltage is 650V, 1200V, etc. In addition, the silicon carbide Schottky diode also has great advantages in terms of loss caused by reverse recovery. A higher DC output can be achieved if a SiC Schottky diode is used in the switching power supply output rectification section.

 SiC diagram
SiC diagram

SiCMOSFET

For the conventional MOSFET, its on-state resistance is large, the switching loss is large, and the rated operating junction temperature is low, but the on-resistance of the SiCMOSFET and the input capacitance are greatly reduced, and the rated operating junction temperature is 200 °C. The system reliability is greatly enhanced, and the stable ultra-fast body diode eliminates the need for an external freewheeling diode.

Silicon Carbide Semiconductor Applications

Silicon carbide semiconductor devices with high frequency, high efficiency, and high temperature characteristics are particularly suitable for applications where efficiency or temperature is critical. Can be widely used in solar inverters, vehicle power supplies, new energy vehicle motor controllers, UPS, charging piles, power supply and other fields.

Advertisements

Leave a Reply