Toshiba electronics and storage company released xk1r9f10qb, a 100V n-channel power MOSFET, which is installed on a low resistance to-220sm (W) package.
What is XK1R9F10QB Mosfet
Toshiba electronics and storage company released xk1r9f10qb, a 100V n-channel power MOSFET, which is installed on a low resistance to-220sm (W) package. The equipment is designed for 48V automotive equipment, such as load switch, switching power supply and motor drive. This is Toshiba’s first U-MOS XH series MOSFET with groove structure, which is manufactured by the company’s latest generation process.
- (1) AEC-Q101 qualified
- (2) Low drain-source on-resistance: RDS(ON) = 1.6 mΩ (typ.) (VGS = 10 V)
- (3) Low leakage current: IDSS = 10µA (max) (VDS = 100 V)
- (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
How does a XK1R9F10QB MOS work?
Xk1r9f10qb has the industry-leading low on resistance, the maximum on resistance is 1.92m Ω, which is about 20% lower than the current “tk160f10n1l”. This improvement helps to reduce the power consumption of the device. Since the capacitance characteristics of the device have been optimized, the device can reduce switching noise, which also helps to reduce EMI of the device. When used in parallel, the threshold voltage width of the device is tightened to 1V to enhance switch synchronization. For more information about xk1r9f10qb, please visit Toshiba’s official website.
- Switching Voltage Regulators
- DC-DC Converters
- Motor Drivers
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