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ROHM announced the availability of six (SCT3xxx xR series) new trench gate structure SiC MOSFETs (650V/ 1200V). It utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, reduces switching loss by up to 35% over conventional 3-pin package types (To-247N) and contributes to lower power consumption in a variety of applications. In the 3-pin package the effective gate voltage at the chip reduces due to the Voltage dropped across the parasitic inductance of the source terminal which reduces the switching speed. Using the 4-pin package separates the driver and power source pins and minimizing the effects of the parasitic inductance components, this made it possible to maximize the switching speed of SiC MOSFETs.

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