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Advantages of SiC And Its Typical Equipment

When selecting high-power switching devices for power conversion, there were only two choices in the past, silicon MOSFETs or IGBTs, but the latest applications such as AC-DC converters, inverters, DC-DC converters, etc., have reached thousands. At the V level, it is necessary to consider products such as SiC that are more resistant to high pressure. For high-voltage switches, SiC MOSFETs offer significant advantages over traditional silicon MOSFETs and IGBTs, supporting high-voltage rails over 1,000 V, operating at hundreds of KHz, and even surpassing the best silicon MOSFETs.

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The Market Structure of SiC and The Engineering Challenges It Brings

Silicon carbide (SiC) is the third-generation semiconductor that has received much attention in the past five years. The development of SiC power devices began in the 1970s. By the 1980s, the quality and manufacturing process of SiC crystals had been greatly improved. In the late 1990s, In addition to the United States, Europe and Japan have also begun to invest resources in research and development. Since then, the industry has begun to accelerate development.

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